NEGF through finite-volume discretization

Most common implementations of the NEGF approach are done using the Finite-Difference Method (FDM) on uniform grids. This discretization scheme allows one to study many types of planar devices, such as MOSFETs, superlattices and planar heterojunctions. Within this paradigm, carrier scattering can be included through the selfenergy approach, almost always under the assumption of local interaction, and a number of specialized numerical schemes have been developed, such as the Recursive Green's Function (RGF) method, to solve the resulting linear algebra in an efficient manner.[1]